THE EFFECT OF THICKNESS ON THE OPTICAL PROPERTIES OF INP QUANTUM DOTS GROWN ON GAAS SURFACES

Authors

  • Sharibaev M. Berdaq Karakalpak State University, Nukus Author
  • Saparniyazova G. Karakalpak Institute of Agriculture and Agricultural Technologies, Nukus, Uzbekistan Author
  • Bazarbayeva H. Berdaq Karakalpak State University, Nukus Author

Keywords:

Quantum dot, energy shift, FL intensity, deformation.

Abstract

This work studies the influence of thickness on the optical properties of InP quantum dots. The spectral position of the maximum corresponding to the InP quantum dot is determined. With an increase in the thickness of the pseudomorphic InAs layer from 1.8 MS to 3 MS, along with a long-wave shift of the quantum dot FL band, its broadening occurred, which indicates the enlargement of quantum dots with simultaneous disorder in their size and shape.

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Published

2026-01-27

Issue

Vol. 2 No. 1 (2026)

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

THE EFFECT OF THICKNESS ON THE OPTICAL PROPERTIES OF INP QUANTUM DOTS GROWN ON GAAS SURFACES. (2026). Modern American Journal of Engineering, Technology, and Innovation, 2(1), 47-51. https://usajournals.org/index.php/2/article/view/1867